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CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7
MTN7002ZHS3
Description
The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET.
Features
* Low on-resistance * High ESD * High speed switching * Low-voltage drive(4V) * Easily designed drive circuits * Easy to use in parallel * Pb-free package
Symbol
MTN7002ZHS3 D
Outline
SOT-323 D
G G S
S
GGate SSource DDrain
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 2/7
Symbol VDSS
VGSS ID IDP IDR IDRP PD TCH Tstg
Limits 60 20 115 700 *1 115 700 *1 200 *2 1250 *3 +150 -55~+150
Unit V V mA mA mA mA mW V C C
Note : *1. Pulse Width 300s, Duty cycle 2% *2. When the device is mounted on a glass epoxy board with area measuring 1x0.75x0.62 inch *3. Human body model, 1.5k in series with 100pF
Electrical Characteristics (Ta=25C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS 10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 7.32 Coss 3.42 Crss 7.63 -
Unit V V A A mS pF
Test Conditions VGS=0, ID=10A VDS=VGS, ID=250A VGS=20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10V, ID=100mA VDS=10V, VGS=0, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Ordering Information
Device MTN7002ZHS3 Package SOT-323 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
0.3 4V 0.25 Drain Current - ID(A) 0.2 0.15 0.1 0.05 VGS=2.2V 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 3V 6V 3.5V
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 3/7
Typical Transfer Characteristics
0.3 0.25 Drain Current -ID(A) 0.2 0.15 0.1 0.05 0 0 1 2 3 Gate-Source Voltage-VGS(V) 4
VDS=10V
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10 Static Drain-Source On-State Resistance-RDS(on)()
VGS=5V
10 Static Drain-Source On-State Resistance-RDS(on)()
VGS=10V
1 0.01 0.1 Drain Current-ID(A) 1
1 0.01 0.1 Drain Current-ID(A) 1
Static Drain-Source On-State Resistance vs Gate-Source Voltage
Reverse Drain Current vs Source-Drain Voltage 10 Source-Drain Voltage-VSD(V)
7 Static Drain-Source On-State Resistance-RDS(ON)() 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25
ID=50mA ID=100mA
1
0.1
0.01
0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Capacitance vs Drain-to-Source Voltage
100
Power Dissipation---PD(mW) 250 200 150 100 50 0
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 4/7
Power Derating Curve
Capacitance---(pF)
10
Crss Ciss
C oss
1 0.1 1 10 Drain-Source Voltage -VDS(V) 100
0
50 100 150 Ambient Temperature---TA()
200
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 5/7
Carrier Tape Dimension
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 6/7
3
A
Marking:
A1 Q Lp
detail Z W B
C
1 e1 e D bp
2
TE 72
E
A
Z
He
0 1 scale 2 mm
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
v A
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
DIM A A1 bp C D E e
Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 -
Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 -
DIM e1 He Lp Q v w
Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 -
Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Recommended temperature profile for IR reflow
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 7/7
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002ZHS3
CYStek Product Specification
No.:T1091
ESD RELIABILITY TEST REPORT TEST REPORT
Company Model Name Date Received Date Tested Cystech Electronics Corp MTN7002ZHS3 2007.11.06 2007.11.08
TESTING LABORATORY IS ACCREDITED BY: IEC/IECQ 17025 certificate of independent test laboratory approval Certificate No.T1091 ISO 17025 accredited in respect of laboratory is approved by TAF Certificate No.L0835-060321 ISO 9001 certificate is approved by TUV CERT certification body of TUV NORD Cert GmbH WE HEREBY CERTIFY THAT: The test(s) shown in the attachment were conducted according to the indicating procedures. We assume full responsibility for the accuracy and completeness of these tests and vouch for the qualifications of all personnel performing them. Name Test Engineer Jay Fang Signature Date
2007/11/06 2007/11/08
Section Manager Note
Kosa Lin
1. This report will be invalid if reproduced in whole or in part. 2. This report refers only to the specimen(s) submitted to test, and is invalid if used separately. 3. This report is ONLY valid with the examination seal and signature of this institute. 4. The tested specimen(s) will only be preserved for thirty days from the date issued, if not collected by the applicant.
Integrated Service Technology Inc. Reliability Engineering Division 1F, No.19, Pu-ding Rd., Hsin - chu City, Taiwan, R.O.C. Tel: 886-3-578-2266, Fax: 886-3-5634868 http://www.istgroup.com
No.:T1091
Report No.HS0711060098A Report No.RAC9603789-E Page 1 of 3
ESD RELIABILITY TEST REPORT
Applicant/Department: Cystech Electronics Corp Product Testing Item Test Method Failure Criteria Test Voltage : MTN7002ZHS3 : ESD-HBM Package/Pin Count: SOP-3
: MIL-STD-883G Method 3015.7 : FOR V CHANGE AT 1A 30% : 2500V ~8000V (), Step250V ()
Integrated Service Technology Inc. Reliability Engineering Division 1F, No.19, Pu-ding Rd., Hsin - chu City, Taiwan, R.O.C. Tel: 886-3-578-2266, Fax: 886-3-5634868 http://www.istgroup.com
No.:T1091
Report No.HS0711060098A Report No.RAC9603789-E Page 2 of 3
ESD-HBM Testing Report
Test Equipment:
KEYTEK ZAPMASTER #10-6098
Environmental Condition of Laboratory: Temperature: 25C5C Humidity: 55%10% RH
Test Condition: D,S - G (+) D,S - G (-) G,S - D (+) G,S - D (-) D,G - S (+) D,G - S (-)
Test Result:
MODEL: HBM PIN COMBINATION ESD SENSITIVITY PASS : 1250V SAMPLE PASSED VOLTS SIZE V CLASS: 1C NOTE: FOR EIAJ TEST NO CLASSIFICATION CLASS 0: < 250V CLASS 1A: 250V TO 499V CLASS 1B: 500V TO 999V CLASS 1C: 1000V TO 1999V CLASS 2: 2000V TO 3999V CLASS 3A: 4000V TO 7999V CLASS 3B: 8000V
D,S - G (+) D,S - G (-) G,S - D (+) G,S - D (-) D,G - S (+) D,G - S (-)
D:3 G:1
1 1 1 1 1 1
+1250V -1500V +1250V -1250V +1250V -1250V
S:2
Integrated Service Technology Inc. Reliability Engineering Division 1F, No.19, Pu-ding Rd., Hsin - chu City, Taiwan, R.O.C. Tel: 886-3-578-2266, Fax: 886-3-5634868 http://www.istgroup.com
No.:T1091
Report No.HS0711060098A Report No.RAC9603789-E Page 3 of 3
D,S - G (+) Test Pin
FAIL VOLTAGE
(UNIT: V)
#1 1500 2000 D,S - G (-)
(UNIT: V)
2 3
Test Pin
FAIL VOLTAGE
#1 -1750 -3500 G,S - D (+)
(UNIT: V)
2 3
Test Pin
FAIL VOLTAGE
#1 1500 PASS G,S - D (-)
(UNIT: V)
1 2
Test Pin
FAIL VOLTAGE
#1 -1500 -1500 D,G - S (+)
(UNIT: V)
1 2
Test Pin
FAIL VOLTAGE
#1 1500 8000 D,G - S (-)
(UNIT: V)
1 3
Test Pin
FAIL VOLTAGE
#1 -1500 PASS
1 3

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